Progress of power field effect transistor based on ultra-wide bandgap Ga_2O_3 semiconductor material  

作　　者：Hang Dong Huiwen Xue Qiming He Yuan Qin Guangzhong Jian Shibing Long Ming Liu 

机构地区：[1]Key Laboratory of Microelectronic Devices & Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences [2]University of Chinese Academy of Sciences [3]School of Microelectronics, University of Science and Technology of China

出　　处：《Journal of Semiconductors》2019年第1期17-25,共9页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(Nos.61521064,61522408,61574169,6 1334007,61474136,61574166);the Ministry of Science andTechnology of China(Nos.2016YFA0201803,2016YFA0203800,2017YFB0405603);the Key Research Program of Frontier Sciences of Chinese Academy of Sciences(Nos.QYZDB-SSWJSC048,QYZDY-SSW-JSC001);the Beijing Municipal Science and Technology Project(No.Z171100002017011);the Opening Project of the Key Laboratory of Microelectronic Devices&Integration Technology,Institute of Microelectronics of Chinese Academy of Sciences

摘　　要：As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.As a promising ultra-wide bandgap semiconductor, gallium oxide(Ga_2O_3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field(8 MV/cm), ultra-wide bandgap(～ 4.8 eV) and large Baliga's figure of merit(BFOM) of Ga_2O_3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor(FET). In this paper, we introduce the basic physical properties of Ga_2O_3 single crystal, and review the recent research process of Ga_2O_3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga_2O_3 is preliminary revealed. Finally, the prospect of the Ga_2O_3 based FET for power electronics application is analyzed.

关 键 词：gallium oxide(Ga_2O_3) ultra-wide bandgap semiconductor power device field effect transistor(FET) 

分 类 号：TN[电子电信]