β-Ga_2O_3 thin film grown on sapphire substrate by plasmaassisted molecular beam epitaxy  

作　　者：Jiaqi Wei Kumsong Kim Fang Liu Ping Wang Xiantong Zheng Zhaoying Chen Ding Wang Ali Imran Xin Rong Xuelin Yang Fujun Xu Jing Yang Bo Shen Xinqiang Wang 

机构地区：[1]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University

出　　处：《Journal of Semiconductors》2019年第1期71-75,共5页半导体学报（英文版）

基　　金：supported by the National Key R&D Program of China(No.2018YFB0406502);the National Natural Science Foundation of China(Nos.61734001,61521004)

摘　　要：Monoclinic gallium oxide(Ga_2O_3) has been grown on(0001) sapphire(Al_2O_3) substrate by plasma-assisted molecular beam epitaxy(PA-MBE). The epitaxial relationship has been confirmed to be [010]( 2ˉ01) β-Ga_2O_3||[ 011ˉ0](0001)Al_2O_3 via in-situ reflection high energy electron diffraction(RHEED) monitoring and ex-situ X-ray diffraction(XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum(FWHM) of XRD ω-rocking curve of( 2ˉ01) plane and root mean square(RMS) roughness of 0.68° and 2.04 nm for the sample grown at 730 °C,respectively. Room temperature cathodoluminescence measurement shows an emission at ～417 nm, which is most likely originated from recombination of donor–acceptor pair(DAP).Monoclinic gallium oxide(Ga_2O_3) has been grown on(0001) sapphire(Al_2O_3) substrate by plasma-assisted molecular beam epitaxy(PA-MBE). The epitaxial relationship has been confirmed to be [010]( 2ˉ01) β-Ga_2O_3||[ 011ˉ0](0001)Al_2O_3 via in-situ reflection high energy electron diffraction(RHEED) monitoring and ex-situ X-ray diffraction(XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum(FWHM) of XRD ω-rocking curve of( 2ˉ01) plane and root mean square(RMS) roughness of 0.68° and 2.04 nm for the sample grown at 730 °C,respectively. Room temperature cathodoluminescence measurement shows an emission at ～417 nm, which is most likely originated from recombination of donor–acceptor pair(DAP).

关 键 词：β-Ga2O3 SAPPHIRE SUBSTRATE PA-MBE CRYSTALLINE quality CL measurement 

分 类 号：O614.371[理学—无机化学] TB383.2[理学—化学]