Preface to the Special Issue on Ultra-Wide Bandgap Semiconductor Gallium Oxide: from Materials to Devices  

作　　者：Xutang Tao Jiandong Ye Shibing Long Zhitai Jia 

机构地区：[1]Shandong University [2]Nanjing University [3]University of Science and Technology of China

出　　处：《Journal of Semiconductors》2019年第1期5-5,共1页半导体学报（英文版）

摘　　要：As one of the ultra-wide bandgap {UWBG)semiconducting materials,gallium oxide has attractive properties with a wide bandgap of about 4.8 eV and a high breakdown field of about 8 MWcm,which offers an alternative platform for various applications such as high performance power switches,RF amplifiers,solar blind photodetectors,and harsh environment signal processing.

关 键 词：Special ISSUE ULTRA-WIDE Bandgap SEMICONDUCTOR GALLIUM OXIDE 

分 类 号：TN[电子电信]