多量子阱结构GaN光致发光谱温度变化特性研究  

Temperature Dependent Characteristics of Photoluminescence Spectrum of Multi-Quantum Well GaN Structure

作　　者：王硕[1] 邓礼松 贾佳 苑进社[1,2] WANG Shuo;DENG Lisong;JIA Jia;YUAN Jinshe(College of Physics and Electronic Engineering,Chongqing Normal University,Chongqing 401331;Chongqing Key Laboratory of Photoelectric Function Materials,Chongqing 401331,China)

机构地区：[1]重庆师范大学物理与电子工程学院 [2]光电功能材料重庆市重点实验室,重庆401331

出　　处：《重庆师范大学学报（自然科学版）》2019年第1期85-88,共4页Journal of Chongqing Normal University:Natural Science

基　　金：重庆高校新型能源转换材料与器件创新团队项目(No.CXTDX201601016)

摘　　要：【目的】研究金属有机物气相外延制备的多量子阱结构GaN材料的变温光致发光谱,探讨多量子阱结构GaN的发光机制。【方法】对样品进行变温光致发光谱测试,从发光强度和发光峰位两个角度研究样品的发光机制。【结果】在10～300K温度范围内光致发光谱共有4个发光峰,温度为10K时观察到的发光峰峰值波长分别位于355,369和532nm,100K时出现峰值波长为361nm的新发光峰。【结论】分析认为位于355,361,369和532nm的多峰发光结构分别与激发光源、激子发光、带边发光、量子阱发光和黄带发光相关。361nm附近带边发光光子能量与温度的变化规律与Vanshni经验公式吻合,369nm附近量子阱发光峰峰位随温度变化呈"S"型。[Purposes]Temperature dependent characteristics of photoluminescence of the multi-quantum well GaN grown by metalorganic vapor phase epitaxial have been reported.Meanwhile the light-emitting mechanism of multiple quantum well GaN was investigated.[Methods]Photoluminescence spectra of the sample was tested under varying temperature,luminous mechanism of the structure was elucidated from both luminous intensity and peak positions.[Findings]It was found that there appears four luminous peaks in photoluminescence spectra within the range of 10-300 Ktemperature range,when the temperature was 10 K,light-emitting peaks located at 355,369,and 532 nm respectively,when it became to 100 K,new luminescence peak at 361 nm was observed.[Conclusions]The structure exhibited photoluminescence emissions near the 355,361,369,and 532 nm,which were believed to be caused by excitating source and excitonic,band edge,quantum well,yellow band luminescence as well.From the results it was noted that temperature dependence of the intensity of luminescence peak at 361 nm fitted well with the Vanshni’s empirical formula,the performance of the peak position at 369 nm show S type curve.

关 键 词：GaN多量子阱 变温光致发光谱 发光机制 

分 类 号：TN304.26[电子电信—物理电子学]