无硒气氛退火下掺入Sb_2S_3提高CIGS薄膜晶粒尺寸的研究  

STUDY ON Sb_2S_3 PROMOTED Cu(InGa)Se_2 FILMS GRAIN GROWTH WITHOUT POST-SELENIZATION

作　　者：张冷 庄大明 赵明 孙汝军 魏要伟 吕循岩 Zhang Leng;Zhuang Daming;Zhao Ming;Sun Rujun;Wei Yaowei;Lyu Xunyan(Key Laboratory for Advanced Materials Processing Technology of Ministry of Education,School of Materials Science and Engineering,Tsinghua University,State Key Laboratory of New Ceramics and Fine Processing,Tsinghua University,Beijing 10008d,China)

机构地区：[1]清华大学材料学院先进成形制造教育部重点实验室新型陶瓷与精细工艺国家重点实验室,北京100084

出　　处：《太阳能学报》2019年第1期51-55,共5页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(51502152);北京市自然科学基金(3162016)

摘　　要：将一薄层Sb_2S_3置于Cu(InGa)Se_2(CIGS)薄膜与Mo薄膜之间,于不含硒源的惰性气氛中退火,发现随Sb_2S_3厚度的增加,CIGS薄膜的晶粒尺寸显著增大,薄膜的择优生长面由(112)晶面向(220/204)晶面转变。为阐明晶粒的生长机理,研究退火温度对Sb_2S_3掺杂的CIGS薄膜的晶粒尺寸和物相的影响规律,发现薄膜在450～500℃之间晶粒尺寸增大显著。在实验结果的基础上提出一种气相促进晶粒生长的模型和液相促进晶粒生长的模型。A thin Sb2 S3 layer is deposited between Mo film and Cu(InGa)Se2(CIGS)films,and followed with annealing in selenium-free atmosphere. It demonstrates that CIGS film grain size could be significantly increased with Sb2 S3 thickness,together with the preferential orientation of CIGS films altered from(112)to(220/204)plane. In order to illustrate the mechanism of Sb-induced grain growth,the effects of annealing temperature on grain size and phase structure of CIGS films have been explored. These results reveal that the grain growth may take effect between 450 ℃ and 500 ℃. Two models that the volatile phases and liquid phases could promote grain growth have been proposed based on these experimental results.

关 键 词：薄膜太阳电池 晶粒生长 机理 Sb掺杂 CIGS 

分 类 号：TM914[电气工程—电力电子与电力传动]