原位自生SiC纳米线掺杂SiOC陶瓷粉体的制备与介电性能（英文）  

Silicon Oxycarbide Powders Doped with in Situ Grown SiC Nanowires: Synthesis and Dielectric Properties

作　　者：叶昉[1] 段文艳 莫然 殷小玮[1] 张立同[1] 成来飞[1] Ye Fang;Duan Wenyan;Mo Ran;Yin Xiaowei;Zhang Litong;Cheng Laifei(Science and Technology on Thermostructural Composite Materials Laboratory,Northwe'stern Polytechnical University,Xi'an 710072, China)

机构地区：[1]西北工业大学超高温结构复合材料实验室,陕西西安710072

出　　处：《稀有金属材料与工程》2019年第1期39-43,共5页Rare Metal Materials and Engineering

基　　金：National Natural Science Foundation of China(51602258,51502242,51725205,51332004);Natural Science Basic Research Plan in Shaanxi(2017JM5094)

摘　　要：以二茂铁为催化剂,催化裂解陶瓷聚合物先驱体制备了原位自生SiC纳米线掺杂的SiOC陶瓷粉体。SiC纳米线为堆垛方向为<111>的β相单晶体,直径为10～100 nm,长度可达数微米,均匀分布在SiOC粉体中。基于SiC纳米线微观结构分析,探讨了纳米线的生长机制。研究了复合陶瓷粉体的介电性能。结果发现,SiC纳米线含量可调控复合粉体的电性能,较高含量纳米线可赋予复合粉体较高的介电实部与虚部。The amorphous silicon oxycarbide powders containing in situ grown single-crystal silicon carbide nanowires were fabricated via the pyrolysis of a polymeric precursor us.ing ferrocene as the catalyst.The nanowires,with lengths of several micrometers and diameters of 10-100 nm,were composed of single-crystal β-SiC along the <111>growth direction and uniformly dispersed in the composite powders.The growth mechanism of silicon carbide nanowires was explored by analyzing the microstructure of the silicon carbide nanowires.The dielectric properties of the composite ceramic powders were studied. The results demonstrates that silicon carbide nanowires can be used to adjust the electrical property of the composite,and a high nanowire content can result in a large real and imaginary part ofpermittivity.

关 键 词：SiOC陶瓷 原位自生SiC纳米线 生长机制 介电性能 

分 类 号：TQ174.1[化学工程—陶瓷工业]