基于双脉冲实验的SiC与IGBT特性对比研究  

The Comparative Study on the Characteristics of SiC Module and IGBT Based on Double-pulse Experiment

作　　者：钟再敏[1] 石不凡 黄熙[1] ZHONG Zai-min;SHI Bu-fan;HUANG Xi(Tonal University,Shanghai 201804,China)

机构地区：[1]同济大学汽车学院,上海201804

出　　处：《电力电子技术》2019年第1期75-79,共5页Power Electronics

基　　金：国家自然科学基金(51575392)~~

摘　　要：SiC功率器件的应用要求对SiC半导体器件本身结构性能及工作特性等有系统认识和研究,其相关工作在国内才刚起步。通过搭建双脉冲实验平台,对SiC功率器件驱动工作特性进行实验研究,进行双脉冲测试,实现530 A大电流驱动关断实验。与IGBT模块的双脉冲测试结果对比,SiC功率器件比IGBT器件开关速度更快,开关损耗更小,续流管反向特性好,反向恢复电流更小。此外,针对SiC功率器件关断时的涌浪电压问题,采用纯C吸收电路可有效抑制涌浪电压,降低器件的关断损耗。The application of SiC power devices requires a systematic understanding and research on the structure, performance and working characteristics of SiC semiconductor devices.The related work is just beginning in China.By setting up a dual-pulse experimental platform,the driving characteristics of SiC power device are studied experirnentally,and the dual-pulse test is carried out to realize the high-current drive turn-off experiment of 530 A.Compared with the double pulse test results of IGBT module,SiC power devices have faster switching speed,lower switching loss,better reverse characteristics and lower reverse recovery current than IGBT devices.In addition,aiming at the problem of surge voltage when SiC power device is turned off,the pure C absorption circuit can effectively restrain surge voltage and reduce the turn-off loss of the device.

关 键 词：功率器件 双脉冲实验 涌浪电压 

分 类 号：TN305[电子电信—物理电子学]