VO_2薄膜γ辐照过程的变价和退火现象  

Valence variation and annealing effect in VO_2 thin films during γ-ray irradiation

作　　者：卢勇[1] 林理彬[1] 何捷[1] 卢铁城[1] 

机构地区：[1]四川大学物理系教育部辐射物理及技术重点实验室,四川成都610064

出　　处：《功能材料》2002年第1期73-75,共3页Journal of Functional Materials

摘　　要：对ＶＯ２薄膜进行不同剂量的γ辐照处理，利用ＳＥＭ和ＸＰＳ对辐照前后的薄膜进行分析，发现γ辐照诱导Ｖ离子出现不同价态之间的转变现象，并且价态变化的程度和方向与辐照剂量有关；较低剂量γ辐照在薄膜表面造成显著损伤，当辐照剂量增大时，γ射线在ＶＯ２薄膜中产生退火效应，使薄膜表面质量得到改善。辐照后的ＶＯ２薄膜光透射特性测试结果与上述结论相合，对辐照诱导的价态变化和退火效应的机理进行了讨论。VO2 thermal induced phase transition thin films were irradiated by γ-ray with dose from 35kGy to 3500kGy . The surface image and the variation of vanadium valence of VO2 thin films were characterized by SEM and XPS. The results show that the valence state of vanadium ions was changed by γ-ray irradiation, obvious surface damage on VO2 thin films was produced by irradiation with lower dose, and the surface property of the films was improved after irradiated by γ-ray with higher dose due to irradiation induced annealing process. The degree of damage, annealing phenomena and valence change vary with increasing the γ-ray dose. The results of optical transmittance analysis coincide with the above results. It have been discussed why γ-ray irradiation can induce the effect of annealing process and valence change on VO2 thin films.

关 键 词：Γ辐照 变价 退火效应 热致相变材料 二氧化钒薄膜 

分 类 号：TB34[一般工业技术—材料科学与工程] O484[理学—固体物理]