用于高分辨率Si-PIN探测器的低噪声电荷灵敏前置放大器的设计  

Design on Low-noise Charge Sensitive Preamplifier for High Resolution Si-PIN Detectors

作　　者：刘洋[1] 田华阳[1] 何高魁[1] 黄小健[1] 郝晓勇[1] 继世梁 

机构地区：[1]中国原子能科学研究院,北京102413

出　　处：《核电子学与探测技术》2014年第3期317-321,共5页Nuclear Electronics & Detection Technology

摘　　要：介绍了一种用于高分辨率Si-PIN探测器的低噪声晶体管反馈电荷灵敏前置放大器的设计。在场效应管制冷到-20℃,成形时间为6μs条件下,前放的零电容电子学噪声(对Si探测器)为150 eV。与平面工艺技术制备的厚度500μm,灵敏面积5 mm2的Si-PIN探测器配用,采用小型温差电制器制冷至-20℃,对5.9 keV X射线的能量分辨率(FWHM)最好可以达到195 eV。This paper describes the design of low -noise transistor reset mechanism charge sensitive preamplifier for high resolution Si -PIN detectors.With 6μs shaping time,The preamplifiers zero-capacitance electronics noise is 150 eV（ to Si detector ） when the JFET of preamplifier cooled to -20℃.Coupled with a 5 mm2 sensi-tive area, 500 μm thickness Si -PIN detector manufactured by planar technology , the best energy resolution of 5.9 keV X ray can reach to 195eV ,while the detector and JFET cooled with two stage peltier to -20℃.

关 键 词：电荷灵敏 晶体管反馈 低噪声 高分辨率 SI-PIN探测器 

分 类 号：TN722.71[电子电信—电路与系统]