多孔氧化铝有序膜的制备研究  

Preparation and Study of Porous Anodic Alumina Film

作　　者：王爱华[1] 管荻华[1] 周维亚[2] 王刚[2] 解思深[2] 

机构地区：[1]北京科技大学化学系,北京100083 [2]中国科学院物理研究所,北京100080

出　　处：《无机化学学报》2002年第5期447-450,共4页Chinese Journal of Inorganic Chemistry

基　　金：国家自然科学基金资助项目(No.19774074)。

摘　　要：本文用阳极氧化法分别在硫酸和草酸电解液中成功制备出高度有序、具有纳米级孔洞的氧化铝有序阵列模板。采用饱和HgCl2去除Al基体后,得到典型六方形结构的多孔Al2O3有序膜。通过改变氧化电压、氧化时间等条件使模板的孔径、孔深可调、膜厚度可控,并系统研究了对模板有序性、孔径、膜厚度等的影响因素,总结出制备Al2O3有序膜的最佳工艺。Nanometer-scale Al2O3 template with highly ordered and closely packed hexagonal pore structure were prepared by a two-step electrochemical anodizing process in H2SO4 and H2C2O4 respectively. The Al2O3 films with adjustable and controllable pore diameter were measured by SEM. The depth of the pores and the thickness of the films can be controlled by altering the anodic voltages, oxidizing time, temperature and concentration of electrolyte solutions. The remained Al base was removed by dissolving in saturated HgCl2 solution to get Al2O3 films with typical hexagonal structure. The optimum conditions of preparation were studied and discussed.

关 键 词：多孔氧化铝 阳极氧化 有序阵列 制备 有序膜 制备 纳米材料 

分 类 号：TB383[一般工业技术—材料科学与工程] O614.31[理学—无机化学]