基于时序特征的CMOS施密特电路开关级设计  

Design of CMOS Schmitt Circuits at Switch Level Based on Their Sequential Characteristic

作　　者：汪鹏君[1] 吴训威[1] 夏银水[1] 

机构地区：[1]宁波大学电路与系统研究所,315211

出　　处：《固体电子学研究与进展》2002年第1期100-103,126,共5页Research & Progress of SSE

基　　金：浙江省自然科学基金 (No.6990 15 );宁波市青年科学基金 (No.0 1J2 0 3 0 0 -2 7)资助项目

摘　　要：根据施密特电路对输入信号具有二种检测阈值的工作特点 ,提出了施密特电路与用作存贮元件的触发器之间具有相同的时序特征。利用时序电路的设计方法 ,系统地研究了传统的 CMOS施密特电路的各种设计 ,并发现了一些新的设计方案。Based on the working characteristic of Schmitt circuits which have two detection thresholds to input signals, this paper proposes that Schmitt circuits have the same sequential characteristic as flip flops which are used as memory units. With the design procedure of sequential circuits, varieties of designs of the traditional CMOS Schmitt circuits are systematically investigated, and some new designs are found. PSPICE simulations prove that the circuits designed in this paper have ideal characteristic of Schmitt circuits.

关 键 词：施密特电路 时序特征 开头级设计 互补对称式金属-氧化物-半导体电路 

分 类 号：TN79[电子电信—电路与系统]