中红外GaInAsSb PIN多结光伏探测器设计与数值模拟  

The Material Construction Design and Numerical Simulation of GaInAsSb Multi-junction PIN Photovoltaic Infrared Detector

作　　者：梁帮立[1] 夏冠群[1] 周咏东[2] 范叔平[2] 

机构地区：[1]中国科学院上海冶金研究所,200050 [2]苏州大学物理系,215006

出　　处：《固体电子学研究与进展》2002年第1期114-119,共6页Research & Progress of SSE

基　　金：国家 8 63高技术研究基金 (课题编号 863 -715 -0 0 1-0 15 2 )资助项目

摘　　要：从非平衡载流子的扩散 -复合理论出发 ,提出 PIN多结探测器材料结构 ,并建立了理论模型进行定量计算 ,从理论上解决了不能同时兼顾增大量子效率与光电增益和降低噪声的矛盾。利用该模型对 Ga In As Sb材料体系作了数值模拟 ,单结器件性能的计算值和实测值基本吻合 ,并根据多结器件模拟结果设计了工作于2 .4μm波段的 Ga In As SbA method of fabricating multi junction photovoltaic detector to improve the performance of detectors and a general model of describing the ultimate performance of multi junction PIN photovoltaic infrared detectors starting from non equilibrium carriers diffusion recombination theory are presented and a material construction for GaInAsSb multi junction PIN photovoltaic infrared detectors operating at the wavelength of 2.4 μm at room temperature is designed. Using this theoretical model, some numerical simulations are carried out and it is found that the performance of single junction device nears the performance of real devices reported by some references and fabricated by ourselves and the multi junction can make the device achieve much better performance.

关 键 词：镓铟砷锑 多结结构 数值模拟 红外探测器 光伏探测器 

分 类 号：TN215[电子电信—物理电子学]