多孔硅生长的三维Monte Carlo模拟  

3D Monte Carlo Calculation of Porous Silicon Formation

作　　者：宗祥福[1] 吴福杨[1] 翁渝民[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《复旦学报（自然科学版）》2002年第2期202-207,共6页Journal of Fudan University：Natural Science

摘　　要：采用修正的逾渗模型 ,通过简单的三维MonteCarlo计算 ,模拟了多孔硅中孔形成的动力学过程 .计算结果表明 :长成的孔的形貌主要与衬底的掺杂浓度有关 ;在所有的强发光多孔硅的表面及体内都存在海绵状的多孔结构 ;孔度的最大值并不是在最外表面 ,而是在表面下的某个层区上 ;硅耗尽层的宽度取决于多孔硅的孔度 ,孔度越高 ,宽度越小 ;在高孔度多孔硅中 ,表面的孔度梯度是很大的 ,预期此特征正是决定多孔硅发光成功与失效的关键之一 .A three dimensional Monte Carlo calculation has been carried out to study the dynamics of pore formation in porous silicon, based on a modified percolation model. As an approximate guide, the type of formed morphology was shown to depend mainly on the doping level of the substrate. The result clearly shows the presence of sponge like morphological feature within all three dimensional lattices in intense luminescent PS. The porosity maximum is not at the outmost surface, but at some layer below the surface. The width of depletion layer depends on porosity. The higher porosity is, the narrower width. In the case of highly porous silicon the porosity gradient on the surface is very high. These features are important both to the success and to the failure of photoluminescence of PS.

关 键 词：三维Monte CARLO模拟 多孔硅 海绵状 孔度 耗尽层 

分 类 号：O613.72[理学—无机化学]