单晶硅片温度的拉曼光谱测定  

The measurement temperature of monocrystalline silicon with Raman spectrum

作　　者：俞帆[1] 董勤[1] 龚光林[1] 曾昭权[1] 刘刚[2] 

机构地区：[1]云南大学实验中心,云南昆明650091 [2]云南师范大学分析测试中心,云南昆明650092

出　　处：《云南大学学报（自然科学版）》2002年第3期202-203,共2页Journal of Yunnan University(Natural Sciences Edition)

基　　金：云南省教育厅分析测试基金资助项目

摘　　要：提出测定单晶硅片温度的拉曼散射光谱法 .选择硅的 5 2 0cm-1散射带进行观测 ,分别记录下它的stokes和anti-stokes散射分量的强度 ,计算得到了硅表面激光焦斑处的温度 ,多次测定结果甚为一致 ,表明非接触拉曼光谱测定温度可与硅晶体结构的拉曼光谱研究同时进行 ,拉曼光谱测温法具有一定的实用性和普遍意义 .A method of determination the temperature of monocrystalline silicon with Raman spectrum is raised.We observed 520?cm -1 scattering band of monocrystalline silicon,got the intensities of its stokes and anti-stokes scattering and calculated the temperature of focal point in the surface of monocrystalline silicon.The results of many tests show no difference.This work indicates that the contactless measurement of temperature with Raman spectrum can be carried on at the same time with the study of crystal structure of silicon and this method is practicable and of universal significance.

关 键 词：单晶硅 拉曼光谱 温度测定 stokes散射分量 anti-stokes散射分量 光谱强度 

分 类 号：O657.37[理学—分析化学] TH811[理学—化学]