高温闪烁晶体Ce∶YAP的生长研究  被引量:9

Czochralski Growth of High-temperature Scintillator Crystal Ce∶YAP

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作  者:李涛[1] 赵广军[1] 何晓明[1] 徐军[1] 潘守夔[1] 徐月泉 

机构地区:[1]中国科学院上海光学精密机械研究所,上海201800 [2]上海中科嘉浦光电子材料有限公司,上海201821

出  处:《人工晶体学报》2002年第2期85-89,共5页Journal of Synthetic Crystals

摘  要:Ce∶YAP晶体具有优良的闪烁性能 ,其主要特点是光产额大 ,衰减时间短 ,发射峰与光电倍增管的接收范围相匹配 ,在γ射线探测、核医学等方面有着广阔的应用前景。我们用提拉法生长了不同掺杂浓度的Ce∶YAP晶体 ,成功地解决了在生长过程中出现的晶体开裂及孪晶问题 ,并对晶体生长过程中的爬料、纯YAP晶体着色等现象作了讨论。X射线激发发射谱表明晶体的发射峰在 388nm ,吸收测试则显示晶体在 2 5 4nm、36The Ce∶YAP single crystal has remarkable scintillation properties with high light output,short decay time and the peak of its emission being well coupled with the sensitivity of photomultipliers.It has potential applications in γ-ray detection,nuclear medicine,etc.A series of crystals with different Ce concentrations have been grown by the Czochralski technique,and the cracking and twinning of crystals were successfully overcomed.Some phenomena such as creeping of the melt from the crucible,coloring of undoped crystals were also discussed in the article.The X-ray excited emission specta showed that the peak of the as-grown crystal was 388nm and the absorption spectra showed two absorption peaks with wavelength of 254nm and 336nm.

关 键 词:高温闪烁晶体 CE:YAP 提拉法晶体生长 X射线激发发射谱 吸收谱 铈掺杂 

分 类 号:O782.5[理学—晶体学]

 

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