β′-Gd_2(MoO_4)_3晶体生长中的过冷现象研究  

Study On Supercooling during the Growth of β′-Gd_2(MoO_4)_3 Crystal

作　　者：袁清习[1,2] 李红军[1,2] 庄漪[1,2] 徐军 潘守夔[1,2] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800 [2]南京大学固体微结构物理国家实验室,南京210008

出　　处：《人工晶体学报》2002年第2期117-120,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金 ( 6 98780 30 )资助项目

摘　　要：对电阻加热引上法和感应加热引上法生长 β′ Gd2 (MoO4 ) 3 晶体的实验结果进行了比较 ,分析了两种方法生长晶体过程中熔体过冷和组分过冷的情况。研究认为组分过冷主要与生长过程中MoO3 的挥发、Gd2 (MoO4 ) 3 熔体的粘度及固液界面的温度梯度有关 。We compared the experimental results of growing β′-Gd 2(MoO 4) 3 crystal by resistance-heated and induction-heated Czochralski (Cz) technique.The constitutional supercooling and the supercooling of the melt during the Cz process were discussed.We consider that the constitutional supercooling was related to the volatilization of MoO 3,the viscosity of Gd 2(MoO 4) 3 melt and the temperature gradient in solid-liquid interface.We conclude that the high quality transparent β′-Gd 2(MoO 4) 3 crystal grown by induction-heated Cz technique is easier than by resistance-heated Cz technique.

关 键 词：β'-Gd2(MoO4)3 晶体生长 过冷现象 电阻加热引上法 感应加热引上法 熔体过冷 组分过冷 

分 类 号：O781[理学—晶体学] O782.5