下降法生长Bi_4Ge_3O_(12)大尺寸单晶中散射芯的形成和消除  

Formation and Elimination of the Scattering Inclusions in Bi_4Ge_3O_(12) Crystals Grown by Bridgman Method

作　　者：肖海斌[1] 胡关钦[1] 王绍华[1] 徐力[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海201800

出　　处：《人工晶体学报》2002年第2期135-139,共5页Journal of Synthetic Crystals

摘　　要：本文报道了以Bi2 O3 和GeO2 粉末为原料 ,采用改进的Bridgman法生长的大尺寸单晶中的散射芯现象。借助于显微镜和电子探针对散射芯进行了研究 ,发现散射芯主要是由铂金微颗粒组成。分析了散射芯产生的原因 。In this paper, the scattering inclusions which often exist in the large-size Bi 4Ge 3O 12 single crystals grown from the mixture of Bi 2O 3 and GeO 2 powders by Bridgman method are reported.It was found that they mainly consist of platinum particles by microscope and electrom microprobe. Their formation cause was analy-zed,and some elimination measures were suggested.

关 键 词：下降法 Bi4Ge3O12 大尺寸单晶 散射芯 形成 消除 BRIDGMAN法 宏观缺陷 晶体生长 BGO晶体 

分 类 号：O771[理学—晶体学]