盐酸蒸气处理对酞菁氧钛薄膜的影响  

Effects of HCl Vapor on TiOPc Films Prepared by Vaccum Vapor Deposition

作　　者：季振国[1] 许倩斐[1] 朱玲[1] 王龙成[1] 芮祥新[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《真空科学与技术》2002年第2期94-96,共3页Vacuum Science and Technology

基　　金：国家自然科学基金 (No .697760 0 6);中日合作项目 (C0 5 0 )资助课题

摘　　要：用HC1蒸气对真空蒸发沉积的酞菁氧钛薄膜进行了处理 ,并用UV Vis吸收谱、X射线光电子能谱 (XPS)和X射线衍射 (XRD)进行了分析。吸收谱结果表明HC1与酞菁氧钛蒸气作用后产生一个新的吸收峰 ,峰值位于 82 0nm附近。此峰的出现使得酞菁氧钛光吸收带 (Q带 )加宽进入红外波段。光电子谱分析表明酞菁氧钛薄膜的成分发生了变化 ,其中Cl和O的含量随HC1蒸气处理时间的增加而增加 ,而N和Ti的含量随HC1蒸气处理时间的增加而减小 ,说明HC1蒸气可与真空蒸发沉积的酞菁氧钛薄膜发生作用。XRD测试结果表明 ,经HC1蒸气处理后的酞菁氧钛薄膜的衍射谱中出现了若干新的衍射峰 。TiOPc films prepared by vacuum vapor deposition were treated by HC1 vapor.UV Vis,XPS,and XRD were used to characterize changes caused by HC1 vapor.The results of UV Vis absorption spectra show that the Q band of the films treated by HC1 broadens with a new band centered at about 820 nm.XPS results show that N and Ti concentration decrease while Cl and O concentration increase as the time of HC1 vapor exposure increases,indicating strong interaction between HC1 and TiOPc.XRD results show that the structure of the films treated by HC1 vapor changes and new peaks were found in XRD spectra.

关 键 词：盐酸蒸气 处理 酞菁氧钛薄膜 吸收带增宽 真空蒸发沉积 发敏性 有机光导材料 XPS XRD 

分 类 号：O484.41[理学—固体物理]