镍钼修饰的p型硅电极材料的制备和性能  

PREPARATION AND PROPERTY OF Ni-Mo/p-Si ELECTRODE MATERIALS

作　　者：姚素薇[1] 赵转清[1] 张卫国[1] 龚正烈[2] 

机构地区：[1]天津大学 [2]天津理工学院

出　　处：《材料研究学报》2002年第1期82-87,共6页Chinese Journal of Materials Research

基　　金：国家自然科学基金资助项目69878021

摘　　要：在半导体ｐ型Ｓｉ上恒电流沉积纳米晶和非晶Ｎｉ－Ｍｏ合金薄膜，制备出Ｎｉ－Ｍｏ合金修饰的半导体ｐ型Ｓｉ电极镀层．用ＳＥＭ对膜层进行了表征，测量了两种电极镀层的阴极催化析氢曲线，纳米晶Ｎｉ－Ｍｏ／ｐ－Ｓｉ镀层的催比析氢性能较好，测量了光照下纳米晶Ｎｉ－Ｍｏ／ｐ－Ｓｉ电极的催比析氢曲线．结果表明， Ｎｉ－Ｍｏ颗粒尺寸在４０～１００ｎｍ时，光照下电极的析氢过电位比无光照减小了约１６０ｍＶ（电流密度为８ ｍＡ·ｃｍ－２），催比析氢活性显著提高．Two kinds of electrode materials have been prepared by constant current electrode- positing nanocrystalline and amorphous Ni-Mo alloy film on p-Si(Ni-Mo/p-Si). From cathodic po- larization curves of hydrogen evolution reaction, it can be found that the nanocrystalline Ni-Mo/p-Si characterized by SEM is more efficient photocathode for hydrogen production. The cathodic polariza- tion curves for hydrogen evolution of the nanocrystalline Ni-Mo/p-Si under illumination and in dark are detected. When the size of Ni-Mo particles is 40-100nm, the overpotential for hydrogen evolution of the nanocrystaliine Ni-Mo/p-Si under illumination is lower l60mV than that in dark (when the current density is 8mA·cm2).

关 键 词：镍 钼 修饰 p型硅 电级材料 制备 催化析氢 光照 半导体材料 氢气 制备 光解 

分 类 号：TQ116.21[化学工程—无机化工] O646.5[理学—物理化学]