哑铃形碳化硅晶须生长的机理　  

GROWTH MECHANISM OF DUMBBELL-SHAPED BIOMIMETIC SiC WHISKERS

作　　者：白朔[1] 成会明[1] 苏革[1] 魏永良[1] 沈祖洪[1] 周本濂[1] 

机构地区：[1]中国科学院金属研究所,沈阳市100016

出　　处：《材料研究学报》2002年第2期136-140,共5页Chinese Journal of Materials Research

基　　金：国家自然科学基金资助项目59431014;50025204

摘　　要：研究了仿生哑铃形碳化硅晶须的生长机理．发现组成仿生晶须的念珠状小球与直杆状碳化硅晶须的生成过程是相对独立的、而且念珠状小球在直杆状晶须上的生长位置是一定的，首先，直杆状碳化硅晶须在反应空间中生成：然后由Ｓｉ、ＳｉＯ、ＳｉＯ２等组成的非晶态物质在直杆状晶须上的缺陷位置沉积长大．形成包裹在晶须上的念珠状小球， 念珠状小球不仅可以在制备碳化硅晶须的过程中生成．而且能够在已有的碳化硅和钛酸钾等晶须上生成。The growth mechanism of dumbbell-shaped SiC whiskers was proposed according to the results of direct and indirect experiments. The direct experiment was designed to change the reaction time from 10 min to 4 hrs, and in the indirect experiments the commercial SiC and K2O&middot6TiO2 whiskers were used to investigate whether beads grow on their surface or not. It was found that the growth of the SiC whiskers and beads composing the biomimetic SiC whiskers were independent. First the whiskers grew up in the furnace, then the amorphous materials composed of Si, SiO and SiO2 began to deposit on the stacking faults of the grown whiskers and form beads encircled the whiskers. Moreover, the beads also can be formed on the commercial SiC and K2O&middot6TiO2 whiskers.

关 键 词：哑铃形碳化硅晶须 SIC晶须 仿生 生长机理 复合材料 增强剂 

分 类 号：O784[理学—晶体学] TB332[一般工业技术—材料科学与工程]