施主掺杂对TiO_2氧敏材料缺陷化学的影响  

Influence of Donor Doping on the Defect Chemistry of TiO_2

作　　者：黎步银[1] 周东祥[1] 吕文中[1] 姜胜林[1] 龚树萍[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074

出　　处：《压电与声光》2002年第2期131-134,共4页Piezoelectrics & Acoustooptics

基　　金：湖北省自然科学基金资助项目 (2 0 0 0 J164 )

摘　　要：对施主 V2 O5掺杂 Ti O2 材料的高温电导进行了详细的测试 ;XRD分析表明少量施主掺杂并未改变材料的金红石结构 ;施主掺杂样品在较高温度测试时 ,在高氧分压一侧 ,发生电导类型转变 ,从而使测氧范围变窄。运用缺陷化学分析法 。High temperature conductivity of donor doping TiO 2 ceramic were measured in detail;XRD analysis indicted that a small amount of donor dopant does not change the crystal structure significantly.At higher measuring temperature,conductivity mechanism changes at higher oxygen partial pressure,and the measuring range become narrow.Conductivity mechanism at different oxygen partial pressure is explained using defect chemistry.

关 键 词：施主掺杂 氧敏材料 缺陷化学 二氧化钛 

分 类 号：TN304.21[电子电信—物理电子学]