一个950MHz CMOS低噪声放大器的设计  

A 950MHz CMOS LNA design

作　　者：张振勇[1] 胡伟[1] 赵勇[1] 杨莲兴[1] 

机构地区：[1]复旦大学ASIC国家重点实验室,上海200433

出　　处：《半导体技术》2002年第5期36-39,共4页Semiconductor Technology

摘　　要：介绍了一个采用0.18mm 1.8V RF CMOS工艺,适合 GSM接收器,中心频率为950MHz的低噪声放大器(LNA)的设计过程,并给出了spectreRF的模拟结果。在935～960MHz频带内,LNA功率增益大于16dB,阻抗匹配系数S11小于-18dB,噪声系数(NF)小于2.7dB,IIP3为-3.06dBm,1dB压缩点为-10.955dBm,功耗小于20mW。A center frequency 950MHz CMOS LNA is described,which is designed for the GSMreceiver. The simulation results by SpectreRF are offered. In band 935～960MHz,power gain isgreater than 16dB, the noise figure (NF) of the LNA is less than 2.7dB, S11 is less than -18dB,IIP3is -3.06dBm,1-dB compression point is -10.955dBm,power dissipation is less than 20mW .TheLNA is fabricated by 0.18mm RF CMOS process.

关 键 词：低噪声放大器 噪声系数 功率增益 阻抗匹配 CMOS 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN722.3