一种低烧、低介、高频多层片式电感用的介质材料  

Low-T Sintering, Low-Dielectric Materials for High Frequency Multilayer Chip InductorsLUO Ling-Hong, ZHOU He-Ping, PENG Rong, QIAO Liang(1. State Key Lab of New Ceramic and Fine Processing, Department of Materials Science and Engineering Tsinghua Univers

作　　者：罗凌虹[1,2] 周和平[1] 彭榕[1] 乔梁[1] 罗凌虹 

机构地区：[1]清华大学材料科学与工程系新型陶瓷与精细工艺国家重点实验室,北京100084 [2]景德镇陶瓷学院材料工程系,景德镇333001

出　　处：《无机材料学报》2002年第3期497-503,共7页Journal of Inorganic Materials

基　　金：国家自然科学基金(69995523)

摘　　要：利用复合结构原理，研制出“硼硅玻璃＋α-石英＋硅酸锌”率低烧低介陶瓷材料，利用XRD、HP4194频谱仪，SEM分析了该材料的晶相组成，介电性能及显微结构，结果表明：在高频下，该材料具有很低的介电常数（K＝4－5，1MHz）和很低的介电损耗（tanδ<0.001,1MHz），同时能在低于900℃温度下烧中，该材料是一种理想的适用于高频（1GHz以上）多层片式电感（MLCIs）元件用的介质材料，同时得出：在该组成中，硼硅玻璃重烧结的过程中有方英析出；少量硅酸锌由于锌离子进入玻璃中而转变为亚硅酸锌；硅酸锌在该组成中有助烧结的作用，该材料介质性能随频率的变化与德拜方程的描述基本吻合。The low temperature sintering and low dielectric properties ceramic materials of ' borosilicate glass+ alpha-quartz+zinc silicate ' system were prepared by applying the principle of the componund structure. The crystal phases, dielectric properties and microstructure of the all sintering samples were analyzed by X-ray diffraction (XRD), HP4194ALCR analyzer and scanning electron microscopy (SEM) respectively. The results show these materials possess very low dielectric constant (K=4-5, 1MHz)and very low dissipation factor (tanδ<0. 001, lMHz)in high frequencies. And they can be sintered below 900℃. These materials are promising dielectric materials for high frequencies(≥lGHz) mulitlayer chip inductors (MLCIs). In the mean while, new crystalline phase of cristobalite is formed during re-sintering the borosilicate glass and ZnSiO3 phase is formed from zinc silicate visa zinc ions melting into the glass net. Zinc silicate phase is of an aid-sintering function. The changes of dielectric properties of the samples with frequencies are fit with Debye equation.

关 键 词：多层片式电感 介质材料 硼硅玻璃 α-石英 硅酸锌 高频MLCIs 

分 类 号：TM55[电气工程—电器] TQ174.754[化学工程—陶瓷工业]