微量杂质在 BGO Bridgman 生长和性质上的行为  

Behavior of Trace Impurities in BGO Bridgman Growth and Properties

作　　者：范世(马岂)[1] 

机构地区：[1]中国科学院上海硅酸盐研究所

出　　处：《无机材料学报》1991年第4期399-404,共6页Journal of Inorganic Materials

摘　　要：在 Bridgman 生长的 BGO 闪烁单晶中,含量为 10^(-4)～10^(-6)wt%的 Fe、Pb、Cr、Mn、Co、Ni、Cu、Al 等微量杂质主要来源于原料和工艺过程中的局外污染。铂从坩埚上被侵蚀进入 BGO 熔体,其含量<2×10^(-5)wt%。用 AAS 和 ICP 分析测定了 Bridgman 生长中微量杂质的有效分凝系数。过渡金属杂质,特别是 Fe,使 BGO 染色并引起辐照损伤,形成300～700nm 范围的强吸收谱,致使 BGO 单晶的能量分辨率、相对荧光输出下降约10—20%。在辐照损伤下形成的 Fe、Pb 杂质色心,受热时形成晶体的热发光。The trace impurities of Fe,Pb,Cr,Mn,Co,Ni,Cu,Al etc with 10^(-4)—10^(-6)%contents in BGO scintillator crystal grown by Bridgman method mainly originatefrom raw materials and external contamination.Pt is corroded into BGO melt fromPt crucible,its content<2×10^(-5)%.The coefficient of effective distribution of impurities in BGO Bridgman growthwere measured by AAS and ICP analyses.The impurities of transition metal,especially Fe,dye BGO crystal in color andcause radiation damage,so the strong absorption in 300—700 nm occurs to let theenergy resolution and fluoroluminescence yield of BGO decreased about 10—20%.The color centers of impurities such as Fe,Pb formed under irradiation yield ther-moluminescence during heating.

关 键 词：锗酸铋 BGO 晶体 杂质 晶体生长 

分 类 号：O614.532[理学—无机化学]