TiO_2气敏元件的空燃比敏感特性  

Study on the Sensitive Characteristics of TiO_2 to A/F Ratio

作　　者：林云飞[1] 盛建新[1] 刘彦春[2] 

机构地区：[1]武汉工业大学材料科学系 [2]武汉工业大学自动化系

出　　处：《武汉工业大学学报》1991年第1期1-7,共7页

摘　　要：通过气氛模拟实验,研究了TiO_2气敏元件的空燃比(A/F)敏感特性;借助气体边界层模型分析了临界值(A/F)_c的偏移现象。测定了气孔率、催化剂等对气敏速度的影响。采用EPMA技术,分析了元件表面污染状态对其使用寿命的影响。并初步探讨了掺杂对TiO_2电性能的影响以及TiO_2的自身催化氧化过程。By analogue test of exhaust gas, the sensitive characteristics of TiO_2 to A/F ratio was stud- ied. The effects of some impurities on the electric conductivity of TiO_2,the deviation of (A/F)_c from (A/F)_s in nonequilibrium gas system and the catalysis of TiO_2 were also explained respectively. By computer technology, precisely tested response time and analyzed the effects of catalyst, porosity and thickness of element on response time,and also studied its duration and contaminated surface by EP- MA.

关 键 词：气敏元件 空燃比 TIO2 敏感特性 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]