掺杂单壁碳纳米管的电流特性  

Current Properties in Doped Single-Walled Car bon Nanotubes

作　　者：张振华[1] 彭景翠[1] 陈小华[1] 王健雄[1] 曾晓英[2] 

机构地区：[1]湖南大学应用物理系,长沙410082 [2]长沙交通学院信息与计算科学系,长沙410076

出　　处：《Journal of Semiconductors》2002年第5期499-504,共6页半导体学报（英文版）

基　　金：国家自然科学基金资助项目 (批准号 :5 9972 0 31)~~

摘　　要：依据 Boltzm ann方程及单壁碳纳米管 ( SWNTs)能量色散关系 ,对单个掺杂 SWNTs(金属型和半导体型 )所加偏压、掺杂浓度及管口直径影响输运电流的性质进行数值计算 .分析表明 ,掺杂 SWNs中的电流随偏压变化呈现跃变结构 ;管口直径、掺杂后 Fermi能级附近的态密度以及各通道输运电子的能力直接决定电流的特性 ,如电流强度、跃变间隔及跃变幅度 ;The numerical calculations are performed for the in dividual doped single-walled carbon nanotubes (SWNTs) (metallic and semiconduct or ones) to investigate current properties depending on the bias voltage,doping concentration and tubular diameters within framework of the Boltzmann equation a nd energy dispersion relation of SWNTs.The analysis shows that the current exhib its jump characteristic with varying bias voltage.The current properties,such as the magnitude,jump period and jump amplitude are determined directly by tubular diameter of SWNTs,the state density near Fermi le vel after SWNTs being doped and the capability for transport electrons in differ ent transport channels,as well as current value is influenced by temperature.

关 键 词：单壁碳纳米管 BOLTZMANN方程 能量色散关系 输运通道 电子器件 掺杂 电流特性 

分 类 号：TB383[一般工业技术—材料科学与工程]