钨掺杂对二氧化钛压敏电阻瓷电性能的影响  

Effects of Tungsten Dopant on the Electrical Properties of TiO_2-based Ceramics for Varistors

作　　者：苏文斌[1] 王矜奉[1] 陈洪存[1] 王文新[1] 臧国忠[1] 李长鹏[1] 

机构地区：[1]山东大学物理系,山东济南250100

出　　处：《电子元件与材料》2002年第5期1-2,5,共3页Electronic Components And Materials

基　　金：~~

摘　　要：通过对样品的伏案性质、介电常数以及晶界势垒的测量和分析,研究了WO3对TiO2压敏电阻瓷电性能的影响。研究发现掺入x(WO3)为0.25%的样品表现出最好的压敏性质,其压敏电压为42.5V/mm,非线性系数α达到9.6,以及较高的相对介电常数(εr=7.41×104),是一种具有较好潜力的电容-压敏电阻器。通过不同烧结温度的实验,发现1 350℃是最佳烧结温度。类比ZnO压敏材料的晶界势垒模型,提出了适合TiO2压敏材料的肖特基势垒模型。The electrical properties of TiO2 based ceramics for varistors doped with various VO3 were investigated by measuring the properties of V-1 characteristic,permittivity and boundary defect barriers.It is found that an optimal composition doped with 0.25 mol % WO3 exhibits a breakdown electrical field of 42.5 V/mm,a ultrahigh relative dielectric constant of 7.41×104 and a nonlinear coefficient of 9.6 It is also found that the best sintering temperature is 1 350℃ . By analogizing to the grain boundary defects model for ZnO varistors,a Schottky potential barriers model for TiO2 based ceramics for varistors is introduced.

关 键 词：压敏材料 二氧化钛 肖特基势 钨掺杂 压敏电阻 瓷电性能 电子元件 

分 类 号：TN304[电子电信—物理电子学]