Nb取代对Ba_3Nd_3Ti_(10-n)Nb_nO_(27.5+n/2)瓷介电性能和结构的影响  

Effect of Nb-replacement on the Dielectric Properties and Structure of Ba_3Nd_3Ti_(10-n)Nb_nO_(27.5+n/2)Ceramics

作　　者：韩晓东[1] 江涛[1] 陈亿裕[1] 

机构地区：[1]华南理工大学电子材料与元件系,广东广州510641

出　　处：《电子元件与材料》2002年第3期10-12,共3页Electronic Components And Materials

摘　　要：以Ba3Nd3Ti10O30为基,通过不同量的Nb取代实验,探讨Nb取代对Ba3Nd3Ti10-nNbnO27.5+n/2瓷(n=0～10 mol)(简称BNTN)介电性能和结构的影响.实验结果表明,Nb取代使其?显著提高,并改变??与频率特性.XRD、SEM结构分析可知,主晶相为非填满型钨青铜结构四方晶相.Nb取代产生VA2(Ba)缺位,缺陷结构有利于电子、离子位移极化的发生,晶相极化率增大.显然Nb取代引起这种结构变化是?显著提高的主要机制.Effect of Nb-replacement on the dielectric properties and structure of Ba3Nd3Ti10-nNbnO27.5+n/2 ceramics (n = 0~10 mol) (BNNT) is investigated by adding different amount of Nb into Ba3Nd3Ti10O30-based ceramics. The results show that Nb-replacement can greatly raise e, and change ae and frequency properties. The results of XRD and SEM show that the main crystal phase is the non-full-filled tetragonal tungsten bronze structure. Nb-replacement can produce the VA2(Ba)defect structure and help the occurrence of electron and ion displacement polarization, which raises the crystal phase polarizability. Obviously, the structural change due to Nb-replacement is the main cause of greatly-raised e.

关 键 词：钡钕钛铌瓷 钨青铜结构 缺陷结构 介电常数 铌取代 

分 类 号：TM28[一般工业技术—材料科学与工程]