铁钝化膜半导体特性的光电化学研究  

PHOTOELECTROCHEMICAL INVESTIGATION OF PASSIVE FILM ON IRON

作　　者：张国栋[1] 

机构地区：[1]华东冶金学院化学工程系,马鞍山243002

出　　处：《物理化学学报》1991年第3期366-370,共5页Acta Physico-Chimica Sinica

摘　　要：近年来,光电化学作为金属钝化膜的“现场”(insltu)研究方法越来越受到重视。本文研究了铁钝化膜在硼酸/硼酸钠溶液中的光电化学行为,通过钝化膜的光电流响应与入射光强、波长及电极电位关系研究,说明铁钝化膜的非晶态n型半导体特性。实验部分研究电极由99.99%的纯铁制成(购自上海冶金所),受光面积为0.5cm^2,对电极为1cm^2的铂片,饱和甘汞电极作参比电极。溶液的组成为Na_2B_4O_7(0.075mol·L^(-1))+H_3BO_3(0.3mol·L(-1)),试剂均为分折纯,用二次蒸馏水配制。灯源为400W溴钨灯,光强用JG-Ⅰ型绝对功率计(长春真空器件厂)测量,电极电位用DH-Ⅱ型双恒电位仪(延边电化学仪器厂)控制,测量光电流-电位及光电流-光强关系时,用脉冲白光作光源,脉冲光的频率用斩光器调节。测量光电流-波长关系时,用WDG-Ⅰ型强光单色仪(四平光学仪器厂)产生单色光,并用PAR-5202型锁相放大器测量光电流,The photoelectrochemical behavior of the passive film on iron in pH=8.4 borate buffer solution was investigated. The mechanism considered for the generation of the photocurrent in the passive film, and the principle of the measurement of photocurrent were discussed. The band model of noncrytalline semiconductor was used to demonstrate the depedence of photocurrent on electrode potential and light wavelength. Results indicate that the passive film formed on iron in pH=8.4 borate solution is a noncrystalline semiconductor, its flatband potential (φf_b) is -0.30V(SCE), band gap energe(E_g) is affected by measuring potential(φ_m),When+0.30V<φ_m<+0.80V (SCE), E_g is 1.9eV.

关 键 词：铁印化膜 半导体 光电化学 光电流 

分 类 号：TN301.055[电子电信—物理电子学]