ZnO电压敏陶瓷的直流稳定性及其改善途径的研究  

STUDY OF STABILITY OF ZnO VARISTORS AND ITS IMPROVEMENT UNDER LONG-TERM DC BIAS

作　　者：张美蓉[1] 刘辅宜[1] 刘子玉[1] 

机构地区：[1]西安交通大学电气工程系

出　　处：《西安交通大学学报》1991年第5期51-58,共8页Journal of Xi'an Jiaotong University

基　　金：国家自然科学基金

摘　　要：本文评述了ZnO电压敏陶瓷直流稳定性的研究现状及直流稳定性的改善途径;从添加剂预合成对ZnO电压敏陶瓷直流稳定性的影响展开研究,发现适当配方的添加剂经预合成后,再与ZnO料混合制成的试样,直流稳定性和温度特性得到明显改善。且预合成温度愈高,改善的效果愈显著。经X射线分析发现有Zn_2SiO_4峰,且强度随添加剂预合成温度提高而增大。文章从玻璃体形成观点分析了ZnO电压敏陶瓷稳定性得以改善的原因,认为添加剂预合成促进了致密的玻璃相在晶界附近的形成,有效地阻止了可动离子在外加电场作用下的迁移,从而改善了ZnO电压敏陶瓷的直流稳定性。This paper has reviewed the study of long term stability of ZnO varistor and its improvement approachs so far, then studied experimently the effects of presintering the additives on stability of ZnO varistor ceramic. The stability of ZnO varistor is found to be improved by the process of presintering the additives. Further experimetal evidence shows that the higher the presintering temperature up to 1000℃, the better the improved stability; and the temperature dependence of prebreakdown region of ZnO varistor is also modified. The results of X-ray diffractiou on samplas show that the peaks of Zn_2SiO_4 phase increase with rising of presintering temperature. Based on glass forming theory, the authors believe that the improvemeut of DC stability of ZnO varistor ceramic is due to the presintering which results in the formation of glass phase on grain boundaries during the sintering of ZnO varistor samples., which hinders the migration of interstitial zinc ions and oxygen vacancies under long-term DC bias.

关 键 词：ZNO 压电陶瓷材料 直流稳定性 

分 类 号：TM282[一般工业技术—材料科学与工程]