HL-1M装置第一壁锂-硅复合涂层及其效果  

Si-Li COATING ON THE FIRST WALL IN THE HL-1M TOKMAK AND EFFECTS ON PLASMA PERFORMANCES

作　　者：王明旭[1] 张年满[1] 邓冬生[1] 严东海[1] 崔成和[1] 梁雁[1] 刘永[1] 

机构地区：[1]核工业西南物理研究院,成都610041

出　　处：《核聚变与等离子体物理》2002年第2期100-104,共5页Nuclear Fusion and Plasma Physics

基　　金：国家自然科学基金资助项目 (19885 0 0 3)

摘　　要：在HL 1M装置上新开发出一种第一壁原位锂 硅复合涂覆技术。装置涂覆后 ,真空室内的真空度上升 ,杂质气体的分压强下降 ,低于单一的硅化或锂涂覆。在相同放电参数下 ,具有锂 硅涂层的放电与原位硅化放电相比 :等离子体中的碳、氧杂质浓度下降了 30 % ,尤其是随着等离子体密度上升碳杂质下降得更显著 ;等离子体能量辐射损失降低了 2 5 % ;等离子体边缘温度和密度有所降低 ,这表明等离子体内部约束得到改善。有原位锂 硅复合涂覆的放电结果略好于或同于单一原位锂涂覆放电的结果 ,但这种复合涂层能维持 10 0余次托卡马克放电 ,较单一原位锂涂层维持的放电次数高一个数量级 ,这证明了锂 硅复合涂覆技术的优异性能。In situ silicon containing lithium coating (Si Li coating),a new wall conditioning method,on the first wall in the HL 1M tokamak has been performed by means of plasma assisted chemical vapor deposition.After coating,the impurities in the vacuum vessel of the HL 1M measured by the quadrupole mass spectrometer are largely reduced and are lower than those after the siliconization or lithium coating.With the wall conditioning,CⅢ and OⅥ in plasma are 30% lower than those in the same parameter discharges with siliconization,and CⅢ is reduced with the increase of plasma density and the plasma radiation loss is lowered by 25%.And the decrease of plasma temperature and electron density in the edge plasma indicated that the inner confinement of the plasma had been improved,as compared with that of siliconization.The results are slightly lower than or near those with Li coating wall.It is mostly important that the effective service times of the Si Li coating last for more than 100 shots,which are 10 times over those of the Li coating wall.

关 键 词：HL-1M装置 复合涂层 第一壁 原位锂-硅涂层 等离子体 性能 

分 类 号：TL631.24[核科学技术—核技术及应用] TL621