在多工位炉上CeO_2:Bi_(12)SiO_(20)单晶生长的研究(Ⅰ)──地面生长实验部分  

Growth of CeO_2:Bi_(12)SiO_(20) Crystals in the Multi-Position Furnace

作　　者：周燕飞[1] 唐连安[1] 朱骏雄[1] 

机构地区：[1]中国科学院上海硅酸盐研究所,上海200050

出　　处：《无机材料学报》2002年第2期353-356,共4页Journal of Inorganic Materials

摘　　要：Ｂｉ１２ＳｉＯ２０是一种优质的光折变晶体．但在地面生长掺Ｃｅ：ＢＳＯ晶体时遇到的主要问题是分凝系数远远＜１，导致晶体组分不均匀．本文采用在空间生长掺Ｃｅ：ＢＳＯ晶体的多工位炉进行地面晶体生长，测试了ＣｅＯ２浓度分布和掺Ｃｅ：ＢＳＯ晶体的透过率，以便同空间生长掺Ｃｅ：ＢＳＯ晶体进行比较．Bi12SiO20 single crystals exhibit excellent photorefractive behavior. The main problem in growing doped Ce:BSO crystals on earth is low segregation coefficients that result in a poor chemical homogeneity of the crystals. In our experiments, Ce:BSO crystals were grown on earth in the multi-position furnace especially designed for growing single crystals in space. The dopant distribution and transmission spectra of Ce:BSO grown on earth were measured and compared with that of Ce:BSO crystals grown in space.

关 键 词：掺铈硅酸铋(Ce:BSO) 晶体生长 多工位炉 

分 类 号：O78[理学—晶体学]