半导体量子点最低导带态的量子限制效应  

Quantum confinement effects of the lowest conduction band states in semiconductor quantum dots

作　　者：朱允伦[1] 陈元[1] 翟菊婷[1] 李效白[2] 

机构地区：[1]北京大学物理系,北京100871 [2]专用集成电路国家重点实验室,石家庄050051

出　　处：《微纳电子技术》2002年第6期21-27,共7页Micronanoelectronic Technology

摘　　要：采用最新计算方法和半导体体材料传统量子计算结果,系统研究了14种半导体(Si,Ge,Sn,AlSb,GaP,GaAs,GaSb,InP,InAs,InSb,ZnS,ZnSe,ZnTe,CdTe)的立方量子点,得到了最低导带态的量子限制效应结果,我们把量子点对尺寸的依赖关系分为三类并详细讨论了它们的差别。By using newly calculating method and classical calculation results of quantum theory on semiconductor material,the cubic quantum dots(Si ,Ge ,Sn,AlSb,GaP,GaAs ,GaSb,InP,InAs ,InSb,ZnS,ZnSe,ZnTe,CdTe)are studied systematically.Then,we got quantum confinement effects of the lowest conduction band states in semiconductor quantum dots of four-teen semiconductor.According to their different behaviors with the size of quantum dots,we clas-sified these dots as three categories and discussed their differences in details.

关 键 词：半导体 量子点 量子限制效应 能带结构 

分 类 号：TN201[电子电信—物理电子学]