用荧光粉转换方法制备纯绿色LED  

Fabricating Pure Green (520nm) Light-emitting Diodes by Phosphor Conversion

作　　者：蒋大鹏[1] 赵成久[2] 侯凤勤[2] 刘学彦[2] 申德振[1] 范希武[1] 

机构地区：[1]中国科学院激发态物理开放研究实验室 [2]中国科学院长春光学精密机械与物理研究所,吉林长春130021

出　　处：《发光学报》2002年第3期311-313,共3页Chinese Journal of Luminescence

基　　金：吉林省科技发展计划基金资助项目 (2 0 0 10 3 0 2 )

摘　　要：采用荧光粉转换的方法制备了纯绿色LED ,所制备的纯绿光LED的发光峰值在 5 2 0nm ,其半峰宽约为 30nm ,法向光强为 6 0 0mcd。Violet light emitting diodes chip (GaN based) was used as primary light source and BaMg 2Al 16 O 27 ∶Eu 2+ ,Mn 2+ phosphors was used as light conversion materials. The EL spectral peak of violet LED chip is 395nm. The exciting spectra peak of BaMg 2Al 16 O 27 ∶Eu 2+ ,Mn 2+ phosphors is at 340 nm, but the exciting intensity at 388nm is about the 58% of the maxmum exciting intensity at 340nm (peak). The PL spectrum peak of the BaMg 2Al 16 O 27 ∶Eu 2+ ,Mn 2+ phosphors is at 520nm and the FWHM is about 30nm. The PL spectra of BaMg 2Al 16 O 27 ∶Eu 2+ ,Mn 2+ phosphors is similar with that of green LED. The pure green light emitting diodes was fabricated by the way of phosphors conversion. The EL spectra peak of green LED is at 520 and the FWHM is about 30nm. The luminescent intensity is about 600mcd.

关 键 词：荧光粉转换 纯绿色LED 纯绿光发光二极管 紫光发光二极管 制备方法 

分 类 号：TN312.8[电子电信—物理电子学]