W-型单模单偏振光纤中的硼掺杂和带宽  

Boron-doped Content and Band-width of W-tunneling Optical Fiber

作　　者：季敏宁[1] 

机构地区：[1]昆明理工大学理学院光纤技术研究中心,云南昆明650093

出　　处：《中国激光》2002年第1期52-56,共5页Chinese Journal of Lasers

基　　金：云南省自然科学基金 (编号 :1999F0 0 0 2R)资助项目

摘　　要：分析了W 型单模单偏振光纤中 ,椭圆内包层硼掺杂量与单模单偏振带宽的关系 ,得出了长W 型单模单偏振光纤的带宽与内包层硼掺杂量的大小无关 ,它只由光纤几何结构以及内包层折射率深度确定 ,而对于短W 型单模单偏振光纤 ,硼掺杂量的增加可以增大截止基模能量损耗 ,从而适度提高其消光比和有效带宽。Relationship between boron-doped content and single polarization single mode band-width of W-tunneling optical fiber is analysed. The band-width is independent of the boron-doped content and is determined only by the profile structure and refractive index depth of the inner cladding if the fiber is long enough. For short W-tunneling optical fiber, increasing of boron doped content can raise leakage losses of the fundamental modes below cut-off. It can enhance extinction ratio and effectiveness of band-width of the fiber to some extent.

关 键 词：W-型单模单偏振光纤 硼掺杂量 带宽 折射率 

分 类 号：TN818[电子电信—信息与通信工程]