聚酰亚胺衬底掺Sb的SnO_2透明导电膜的制备  

Transparent Conducting Thin Films of SnO_2:Sb Deposited on Polyimide Substrates: Preparation and Properties

作　　者：杨田林[1] 杨光德[1] 

机构地区：[1]山东理工大学物理系,山东淄博255091

出　　处：《电子元件与材料》2002年第7期5-7,共3页Electronic Components And Materials

基　　金：山东省计委九五攻关项目(鲁计投资[字]1997602)

摘　　要：用射频磁控溅射法在聚酰亚胺衬底上制备出了相对透过率为80%左右、最小电阻率为3.710-3 W·cm、附着良好的SnO2∶Sb透明导电膜。 靶材中Sb2O3的最佳掺杂量为6%(质量分数),最佳溅射压强为1 Pa(90%Ar+10%O2)。制备的样品为多晶薄膜,并且保持了二氧化锡的金红石结构,具有明显的[110]的趋向。并讨论了薄膜的结构和光电特性随衬底温度的变化。Transparent conducting SnO2∶Sb film was deposited on polyimide substrates by RF-magnetron sputtering. The film exhibits excellent adherence, resistivity as low as 3.710-3 Ω·cm and average transmittance over 80%. The proper content of Sb2O3 in the target is wt 6%. The optimum working pressure is 1 Pa (90% Ar+10%O2). The film is of polycrystalline with rutile structure and [110] preferred orientation. The structure, electrical and optical properties of the films change with the temperature of substrates.

关 键 词：聚酰亚胺衬底 掺Sb 导电膜 掺锑 二氧化锡 光电特性 射频磁控溅射 

分 类 号：TN304.21[电子电信—物理电子学]