氢氧化镍电极材料的层错结构表征  

Structural characterization of stacking faults for nickel hydroxide

作　　者：王超群[1] 王宁[2] 李娜娜[3] 张久兴[2] 

机构地区：[1]北京有色金属研究总院,北京100088 [2]北京工业大学材料科学与工程学院,北京100022 [3]中南大学材料科学与工程系,长沙410083

出　　处：《中国有色金属学报》2002年第3期496-500,共5页The Chinese Journal of Nonferrous Metals

基　　金：国家自然科学基金资助项目 ( 5 9872 0 0 6 )

摘　　要：根据氢氧化镍电极材料的X射线衍射谱线的各向异性宽化特性 ,提出层错结构表征方法。采用层错宽化效应的Warren法和Langford谱分解法 ,测算了一些镍电极材料的层错率。结果发现层错率与材料的放电容量存在对应关系 ,放电容量较高 (2 70mA·h/g)的材料层错率达 14.9% ,而放电容量较低 (2 0 7mA·h/ g)的材料层错率为 7.6 %。According to the anisotropic broadening feature in X-ray diffraction pattern of Ni(OH) 2 electrode materials, the stacking fault structural model is proposed. By using the methods suggested from both of Warren and Langford, the stacking fault probability of some nickel hydroxides were determined. Compared with the data of discharge capacity of the material, it is found that there exists a certainly corresponding relationship, e.g. the greater the discharge capacity (270?mA·h/g), the higher the stacking fault probability (14.9%) is and the smaller the discharge capacity (207?mA·h/g), the lower the stacking fault probability (7.6%) is. The structural characterization of electrochemical property was suggested by using stacking fault ratio.

关 键 词：氢氧化镍 电极材料 层错率 放电容量 碱性电池 

分 类 号：TM912.2[电气工程—电力电子与电力传动]