TiO_2薄膜的热处理晶化及形貌研究  

Crystallization and Morphological Changes During the Heat Treatment Process of TiO_2 Thin Films

作　　者：赵珊茸[1] 许效红[1] 王继扬 王民 刘宏 孙大亮 

机构地区：[1]山东大学晶体材料国家重点实验室

出　　处：《压电与声光》2002年第3期221-224,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目 (5 982 3 0 0 3 )

摘　　要：对 Si(111)和 Si(10 0 )衬底上用化学气相沉积法制成的 Ti O2 薄膜进行了不同温度的热处理 ,并用原子力显微镜对处理后薄膜的形貌变化进行了观察。 X-射线衍射分析表明形貌变化过程即晶化过程。晶化物相为金红石。晶化程度 (或形貌变化程度 )与热处理的温度及次数 (或热处理时间 )有关。Si(111)衬底上 Ti O2 晶化形貌为杂乱分布的柱状、板状 ,定向不好 ;而 Si(10 0 )衬底上 Ti O2 晶化形貌为定向较好的四方柱状或板状 ,这是因为 Si(10 0 )与金红石 (0 0 1)都属四方对称结构 ,两相结构在此方向上容易匹配的结果。在相同热处理条件下 ,Si(111)衬底比 Si(10 0 )衬底上 Ti O2 晶化程度高 ,说明非定向附生的晶化作用比定向附生的晶化作用容易实现。Heat treatments at different temperatures have been done on TiO 2 thin films.These TiO 2 thin films were deposited on Si(111)and Si(100)substrates with MOCVD.The morphological changes during the heat treatments were observed by atomic force microscopy(AFM).By XRD we have seen that the morphological changes are related to crystallization process.The crystalline phase is rutile.The crystallization degree(or the morphological change degree)is related to the temperatures and the cycles(or time)of the heat treatments.The crystalline TiO 2 on Si(111)substrate is irregular plates and posts with various orientations,but that on Si(100) substrate is of four fold symmetry and the same orientation.This is due to the fact that the Si(100) face and the rutile(001) face are all of four fold symmetry which results the rutile (001) can heteroepitaxial grow on Si(100) abstrate.The crystallization degree of the TiO 2 thin films on the Si(111)substrate is higher than that on Si(100)substrate under the same heat treatment condition,which illustrates that the irregular crystallization is easier than the heteroepitaxial crystallization.

关 键 词：TIO2薄膜 热处理 晶化作用 晶体形貌 AFM 

分 类 号：TB332[一般工业技术—材料科学与工程]