工业五氧化二钒制备V_2O_5半导体薄膜分析  

Preparation of V_2O_5 Semiconductor Thin Films From Induststrial V_2O_5

作　　者：杨绍利[1] 徐楚韶[1] 陈厚生[2] 胡再勇[1] 

机构地区：[1]重庆大学材料科学与工程学院,重庆400044 [2]攀枝花钢铁研究院,四川攀枝花617000

出　　处：《重庆大学学报（自然科学版）》2002年第5期97-100,共4页Journal of Chongqing University

摘　　要：用攀钢工业V2 O5为原料采用无机溶胶 -凝胶法制备V2 O5溶胶和凝胶 ,并用此胶体在不同衬底上制备出透明的半导体V2 O5薄膜。研究了胶体粘度对涂膜的影响 ,以及薄膜电阻率与温度、烘干处理和厚度的关系。用扫描电子显微镜 (SEM)研究了薄膜的微观形貌 ,用XRD研究了薄膜的成份及其变化。结果表明 :胶体粘度对涂膜有较大影响 ;温度、湿份、薄膜厚度对薄膜电阻率均有较大影响 ;V2 O5薄膜由针状V2 O5颗粒组成 ,在衬底上呈均匀分布 ,且结构比较密集 ,其颗粒径向尺寸为 0 .5～ 1.0 μm ,长度方向为 3 0～ 5 0 μm。烘干处理后颗粒轮廓略有模糊、结构稀疏且尺寸有所长大 ,同时新生成了一些钒化合物。Employment Panzhihua Iron & Steel Corp. industrial V 2O 5 as material and V 2O 5 sol-gel is produced by a inorganic sol-gel method, and employment these colloid for preparation transparent semiconductor V 2O 5 thin films on different substrates. The influence of colloid viscosity on coating thin films is studied,and the influence of temperature and drying and thickness of films on resistivity is studied also. The microcosmic shape of thin films with scanning electron microscope(SEM), and its composition and change with XRD. The result is:the folluwing colloid viscosity has greater influence on Coating films;Temperature, wet share and thickness of thin films have greater influence on resistance of thin films;V 2O 5 thin films'compositions form acicular V 2O 5 particle, it present even distribution on the substrate,and its structure is relatively dense, its particle diameter size is 0.5～1.0 μm and length size is 3 0～5 0μm. After drying handling particle outline is vague, its structure is sparse and its size grows up, at the same time, some new chemical compounds of vanadium form. V 2O 5 thin film is very sensitive to temperature and humidity, which is a good heat-sensing and humidity-sensing semiconductor film material.

关 键 词：V2O5 溶胶-凝胶法 薄膜 电阻率 

分 类 号：TB381[一般工业技术—材料科学与工程]