电阻耦合单电子晶体管电学性能分析  

Electrical Characteristic Analysis of Resistively Coupled Single-Electron Transistor

作　　者：杨涛[1] 蒋建飞[1] 蔡琪玉[1] 

机构地区：[1]上海交通大学微米/纳米科学技术研究院,上海200030

出　　处：《上海交通大学学报》2002年第6期807-811,共5页Journal of Shanghai Jiaotong University

基　　金：国家自然科学基金 (69890 2 2 4);上海 AM基金(980 0 9)资助项目

摘　　要：基于单电子系统半经典模型 ,分析了电阻耦合单电子晶体管的电学特性 ,得到其电学性能不随背景电荷分布变化的特点 .通过时域特性分析 ,指出了时延参数τ=CΣ Rg,并用 Monte-According to the semi classical model, by means of electrical characteristics analysis of R SET, it was proposed that the electrical performance of R SET was not affected by the background charge. The time domain characteristics of R SET was analyzed, and its delay parameter was pointed out. Simulations of the inverter based on R SET using Monte Carlo means were accomplished for the validation.

关 键 词：电学性能 单电子晶体管 电阻耦合 时域特性分析 背景电荷 时延参数 

分 类 号：TN322.4[电子电信—物理电子学]