准一维半导体纳米结构的电子显微学研究(英文)  

Transmission electron microscopy investigation of 1-D semiconductor nanostructures

作　　者：俞大鹏[1,2] 

机构地区：[1]北京大学物理学院 [2]电子显微镜实验室介观物理国家重点实验室,北京100871

出　　处：《电子显微学报》2002年第3期259-264,共6页Journal of Chinese Electron Microscopy Society

基　　金：NationalNaturalScienceFoundationofChina (NSFC ;No .5 0 0 2 5 2 0 6 1 983 4 0 80 ) ;andbytheResearchFundfortheDoctoralProgramofHigherEducation (RFDP) China

摘　　要：本文总结了近年来我们在功能准一维纳米结构材料研究方面所获得的一些有意义的结果。借助于现代电子显微镜技术 ,不仅研究了硅、氮化稼、氧化锌等一维纳米材料的形貌和显微结构 ,还研究了其一维择优生长机理及小尺度效应。尤其是利用高能量分辨电子能量损失谱、高角环形暗场探头等先进技术 ,解决了一个传统X -光等结构分析手段所不能解决的难题 ,分析了一种SiOxIn this paper, we summarize some of the recent progress on investigation of semiconductor nanowires in which the electron microscopy plays a very important role. A diverse variety of semiconductor nanowires (Si, GaN, ZnO, and Ga 2O 3) was synthesized using laser ablation, or by physical vapor deposition (PVD) approaches. The morphology and microstructures of the nanowires were characterized by SEM and TEM. The unidirectional growth and size effect of the nanowires were investigated using HREM. The chemical composition and structure of one peculiar kind of composite nanocables were determined with the analysis via HAADF(high angle annular dart field) and PEELs(parallel electron energy loss spectrometry), it is impossible to be resolved by conventional X ray diffraction method.

关 键 词：准一维 电子显微学 半导体纳米线 纳米结构 纳米材料 半导体 

分 类 号：TB383[一般工业技术—材料科学与工程] TN304[电子电信—物理电子学]