低能束作用下衬底上超薄膜背散射电子发射  

Emission of the backscattered electrons from ultra-thin film on substrate under the action of low-energy beams

作　　者：谭震宇[1] 夏曰源[2] 

机构地区：[1]山东大学电气工程学院,济南250061 [2]山东大学物理与微电子学院,济南250100

出　　处：《物理学报》2002年第7期1506-1511,共6页Acta Physica Sinica

摘　　要：应用MonteCarlo方法模拟千电子伏低能束作用下 ,不同衬底上不同薄膜背散射电子发射 .应用Mott散射截面和Joy方法修正的Bethe方程描述和计算低能电子在固体中弹性和非弹性散射 ,引入边界方程 ,修正穿越薄膜与衬底界面的电子散射路径 .计算分析了薄膜背散射系数 η随薄膜厚度D的变化和规律 ,以及不同情况下 η D线性区范围的分布及其定量结果Dmax.计算了背散射电子角分布和空间密度分布 .The emission of backscattered electrons from an ultra-thin film on a substrate under the action of keV low-energy beams is simulated with Monte Carlo method. The mott cross-section and the modified Bethe equation are used to describe and calculate the elastic and inelastic scattering of electrons in solids, respectively. A boundary equation is introduced to modify the path of the scattered electrons traversing the interface between the film and substrate. The dependence of backscattering coefficient eta on the thickness D of the thin film, the distribution of the linear range of eta-D curve and corresponding quantitative result D-max are calculated and analyzed. The angular distribution and the spatial density distribution of the backscattered electrons on the film surface are also calculated.

关 键 词：低能束 衬底 背散射电子发射 MONTE CARLO方法 超薄膜 角分布 空间密度分布 

分 类 号：O484.1[理学—固体物理]