Sb_2O_3和In_2O_3对ZnO压敏电阻器性能的影响  

Effect of Sb_2O_3 and In_2O_3 Addition on the Properties of ZnO Varistor

作　　者：陈洪存[1] 王矜奉[1] 李明明[2] 

机构地区：[1]山东大学物理系,山东济南250100 [2]济南大学物理系,山东济南250002

出　　处：《电子元器件应用》2002年第7期17-18,共2页Electronic Component & Device Applications

摘　　要：研究了Sb_2O_3和In_2O_3对ZnO压敏电阻器性能的影响。适当添Sb_2O_3和In_2O_3可全面提高ZnO压敏电阻器的性能,使其击穿电场强度达326V/mm,漏电流小于1μA,非线性系数α值达107,通流量高达4kA/cm^2。The effect of Sb_2O_3 and In_2O_3 addition on the properties of ZnO varistor was investigated. It was found that appropriate addition of Sb_2O_3 and In_2O_3 can promote the perfomances of ZnO varistor. For ZnO varistor, its brokendown electric field intensity E is 326V/mm, drain current is less than 1μA, nonlinear coefficient α is 107 and current flux is up to 4kA/cm^2.

关 键 词：非线性系数 漏电流 击穿电场强度 三氧化铅 三氯化二铟 氧化锌压敏电阻 

分 类 号：TM544.5[电气工程—电器]