半导体纳米结构的可控生长  

Controllable Growth of Semiconductor Nanometer Structures

作　　者：王占国[1] 

机构地区：[1]中国科学院半导体研究所,半导体材料科学重点实验室,北京100083

出　　处：《人工晶体学报》2002年第3期208-217,共10页Journal of Synthetic Crystals

基　　金：国家基础研究规划项目 (G 2 0 0 0 0 6 830 0 )

摘　　要：应用MBE技术和SK生长模式 ,通过对研究材料体系的应力分布设计 ,生长动力学研究和生长工艺优化 ,实现了In(Ga)As/GaAs,InAlAs/AlGaAs/GaAs和InAs/InAl(Ga)As/InP无缺陷量子点 (线 )的尺寸、形状、密度和分布有序性的可控生长 ,这对进一步的器件应用特别重要。讨论了半导体纳米结构的空间有序性分布物理起因和退火的机制。Using MBE(Molecular Beam Epitaxy) technique and SK growth mode, through the stress distribution design of the materials system, controlling the growth dynamics and optimizing growth technologies, the uniformity, the density and the spatial ordering of In(Ga)As/GaAs,InAlAs/AlGaAs/GaAs and InAs/InAl(Ga)As/InP nanostructrues can be experimentally controlled.Free defects of quantum dots and quantum wires have been obtained,which are extremely important for device application in future.The physical origins of spatially ordering distribution and annealing mechanism for above mentioned semiconductor nanostructures will be discussed.

关 键 词：半导体 纳米材料 可控生长 量子点 量子线 

分 类 号：TN304.01[电子电信—物理电子学]