吸收式1310nm～1550nm半导体激光器波长稳定的实验研究  

Investigation on Wavelength Stabilization of 1310nm～1550nm Semiconductor Laser by Use of the Optogalvanic Effect of Gases Absorption

作　　者：余般梅[1] 胡渝[2] 曾广荣[2] 冯莹[3] 

机构地区：[1]重庆大学光电工程学院,重庆400044 [2]电子科技大学应用物理所,四川成都610054 [3]国防科技大学理学院,湖南长沙410073

出　　处：《激光与红外》2002年第3期174-176,共3页Laser & Infrared

基　　金：国防预研基金 (97J2 .1.2 )。

摘　　要：文中对半导体激光器光电吸收稳频方法进行了基础研究和原理性实验 ,设计并制作以氪气 (Kr)作吸收介质的光电吸收池 ,实现了波长为 1310nmInGaAsPDFB激光器工作波长的基本稳定。测试结果表明 ,激光器输出中心波长和峰值波长锁定在 130 8.2 79nm ,且 2 0dB谱宽由稳频前的 0 .30nm变为 0 .12nm左右。It has been established that an experiment system of frequency stabilization of semiconductor laser by use of the opto galvanic effect of Krypton,and the spectrum performance of a 1310nm InGaAsP DFB laser has been measured by optical spectrum analyzer(OSA,resolution ratio △λ=0.001nm).The experiment results show that the center wavelength λ 0 and peak wavelength λ p of the DFB laser have been locked to 1308.279 (nm)(400S) and the 20dB line width of laser has been compressed from 0.30nm before frequency stabilization to 0.12nm at present.

关 键 词：半导体激光器 光电吸收池 波长稳定性 实验 

分 类 号：TN248.4[电子电信—物理电子学]