离子束增强沉积技术  

Ion Beam Enhanced Deposit Technology

作　　者：席仕伟[1] 何锦涛[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900

出　　处：《原子能科学技术》2002年第4期458-461,共4页Atomic Energy Science and Technology

摘　　要：采用离子束增强沉积 (IBED)铜过渡层和电子束蒸镀铜膜结合制备的单质膜结构 ,比采用电子束蒸镀钛 铜多层膜结构工艺简单 ,且不增加光刻腐蚀工艺难度 ,铜膜沉积于低表面粗糙度 (Ry≤ 0 .1μm )的氧化铝陶瓷基片表面获得了良好的膜 基附着力。实验证明It is less complicated to make a simple material structure by the combination of IBED transition layer and EBD copper film than to make a multi layer Ti Cu film by EBD.Moreover, the combination of IBED and EBD wouldn't make the next process of photo etching more difficult than EBD. Favorable adhesion can be realized by depositing copper film on the alumina ceramics that has low surface roughness( Ry ≤0.1 μm). Experiments show that the method using the IBED transition copper layer combined with EBD copper film is the best technology among the film fabrication technologies popularly used at present.

关 键 词：离子束增强沉积技术 铜膜 离子源 镀膜工艺 氧化铝陶瓷基片 界面附着力 结构 

分 类 号：TB383[一般工业技术—材料科学与工程] O484[理学—固体物理]