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作 者:冯洁[1]
机构地区:[1]上海交通大学微纳米科学技术研究院,上海200030
出 处:《物理学报》2002年第8期1841-1845,共5页Acta Physica Sinica
摘 要:用对向靶直流溅射系统制备了c轴垂直取向的钡铁氧体薄膜 .用少量的Al来取代Fe ,从而制备了成分为BaAlxFe1 2 -xO1 9(x =0 ,1,2 )的钡铁氧体薄膜 .研究了Al取代Fe对其结晶学性能、磁学性能的影响 .研究了退火效应及基板温度对薄膜性能的影响 .Aluminum was used to substitute for Fe in Ba ferrite films, and the films with the composition of BaAlxFe12-xO19 (x = 0, 1 2) were deposited using facing targets sputtering apparatus on SiOx/Si wafers with a Pt seed layer to enhance the c-axis perpendicular orientation. The crystallization temperature increases with the Al substitution for Fe. With the increase of Al concentration, 4piM(s) decreased, while coercivity H-e and the anisotropy field H-k increased. The squareness S-perpendicular to increased largely by the substitution of Al for Fe. The Al-substituted Ba ferrite films with high H-cperpendicular to (similar to3 10(6) A (.) (4pim)(-1)) and large S-perpendicular to(similar to0.9) were acquired, which may be applicable as perpendicular magnetic recording media.
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