基于AMR效应与Si集成的开关芯片制备与设计  

Fabrication and design of Si-integrated switch chip based on AMR effect

作　　者：武世祥 余涛[1] 王鹏[1] 徐慧忠 张万里[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《磁性材料及器件》2014年第4期34-36,57,共4页Journal of Magnetic Materials and Devices

基　　金：四川省科技支撑计划基金资助项目(2011GZ0118)

摘　　要：采用射频(直流)磁控溅射的方法,在生长了约200nm厚Si3N4过渡层的硅片上制备了NiFe薄膜。采用惠斯通电桥作为磁场的感应部分,设计了惠斯通电桥的尺寸,并通过光刻剥离的技术制备了电桥。研究了NiFe薄膜厚度对电桥敏感特性的影响,确定了厚度为50nm时有较高的灵敏度。将磁电阻敏感单元与信号放大处理电路集成,成功地制作出了磁场感应阀值为160A/m(2Oe)的磁电阻开关芯片。NiFe thin film is deposited on the 200nm-thick Si substrates covered with Si3N4 by RF and DC magnetron sputtering. Using Wheatstone bridge for sensing magnetic field, the size of Wheatstone bridge was designed and the bridge was prepared by photolithography and lift-off techniques. Influence of thickness of NiFe film on the performance of the bridge was investigated, and the result indicates that NiFe film thickness of about 50nm leads to higher sensitivity. By integrating the magnetoresistance element with the signal amplification circuit, magnetic switch chip was successfully prepared with magnetic field threshold value of about 2Oe.

关 键 词：各向异性磁阻 溅射 NiFe薄膜 惠斯通电桥 开关芯片 

分 类 号：TP212.13[自动化与计算机技术—检测技术与自动化装置]