E-PHEMT微波宽带放大器的静电防护电路设计  

Method of Designing ESD Protection Circuit for E-PHEMT Microwave Wideband Amplifier

作　　者：王乔楠[1] 付丽欣[1] 

机构地区：[1]中国电子科技集团公司第十三研究所,河北石家庄050051

出　　处：《军械工程学院学报》2014年第3期36-39,共4页Journal of Ordnance Engineering College

基　　金：国家自然科学基金项目(6097042)

摘　　要：为提升E-PHEMT微波宽带放大器的抗静电能力,在分析放大器3个端口电路结构的基础上,兼顾静电保护效果、电路尺寸、微波特性与被保护电路的有机结合,提出基于PIN二极管作为基本组成元件的微波宽带放大器静电保护电路的设计方法和思路,并研制出实物样品.通过试验对比放大器改进前后的电性能和抗静电能力,其结果表明:改进后样品的微波特性满足规范要求、抗静电能力由500V提高到2 000V.该设计方法和思路在保障放大器电特性的基础上,提升了放大器的抗静电能力.On the basis of analyzing the structure of E-HEMT microwave wideband amplifier’s three ports,this paper proposes the method of designing electrostatic discharge（ESD）protection circuit for microwave wideband amplifier using PIN diode as basic component of protection circuit,meanwhile considering the organic combination of ESD protection effect,circuit size and microwave performance and the circuit under protection in order to improve the amplifier’s anti-electrostatic ability.A sample circuit has been produced.The amplifier＇s electric performance and anti-electrostatic ability before the improvement and those after the improvement are compared through experiments whose results indicate that the amplifier’s anti-electrostatic ability rises from 500 V to 2 000 V and its electric performance satisfies the standard requirement.This design method improves the amplifier＆#39;s anti-electrostatic ability in addition to guaranteeing its electric performance.

关 键 词：宽带放大器 静电放电 防护电路 PIN二极管 

分 类 号：TN722.16[电子电信—电路与系统] TN433