金纳米颗粒增强富硅氮化硅发光特性的研究  

Study on the enhancement of light emission from silicon-rich silicon nitride by gold nanoparticles

作　　者：高洪生[1] 王真真[1] 解意洋[1] 耿照新[1,2] 阚强[1] 王春霞[1] 袁浚[1] 陈弘达[1] 

机构地区：[1]中国科学院半导体研究所,北京100083 [2]中央民族大学信息工程学院,北京100081

出　　处：《光电子．激光》2014年第7期1338-1343,共6页Journal of Optoelectronics·Laser

基　　金：国家重点基础研究计划"973"(2010CB934104;2011CBA00608);国家高技术研究发展计划"863"项目(2013AA013602;2013AA031903);国家重点基金项目(61036009;60736037);国家自然科基金(61378058;61036002;61178051)资助项目

摘　　要：采用时域有限差分(FDTD)方法,对Au纳米颗粒的尺寸和形貌对于其光学特性的影响进行了系统的理论研究。通过采用等离子体增强化学气相沉积(PECVD)、晶化处理、电子束蒸发和高温退火等工艺,制备基于局域表面等离子共振(LSPR)效应的富硅氮化硅发光芯片。利用拉曼光谱仪、扫描电子显微镜(SEM)、奥林巴斯显微镜等对不同结构Au纳米颗粒富硅氮化硅发光器件的特性进行了表征。研究表明,通过对Au纳米颗粒的大小、形状和分布合理优化,富硅氮化硅芯片的发光强度在570nm波长附近提升了7倍,增强峰的位置红移了10nm。Localized surface plasmon resonance （LSPR） effect of gold nanoparticles could b e used to enhance the photoluminescence properties of silicon-rich silicon nitride （SRSN）.The size a nd morphology of gold nanoparticles have significant influence on the light-emitting properties of t he devices.In this paper,the finite-difference time-domain （FDTD） method is applied to investigate the opt ical properties of gold nanoparticles with different sizes and morphologies.The size of gold nanopartic le only affects the LSPR strength, while the morphology affects both the LSPR wavelength and intensity.When the pa rticles become flat,the LSPR wavelength presents red shift and the LSPR becomes stronger.The LSPR based gold nanoparticles were fabricated on the surface of SRSN film.Raman spectroscopy,scanning electron microscopy （SEM） and O LYMPUS microscopy are employed to study the optical properties of SRSN light emitting devices with gold nanoparticles wi th varied size,shape and distribution. The results show that the photoluminescence intensity of SRNS light emitting dev ices could be enhanced by 7times at the wavelength of 570nm by optimizing the size,shape and distribution of gold nanoparticles.Meanwhile,the position of the enhancement peak has a 10nm red shift.

关 键 词：局域表面等离子共振(LSPR) Au纳米颗粒 富硅氮化硅 光致发光(PL) 

分 类 号：TN383.2[电子电信—物理电子学]